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SFP36N03 - Advanced Power MOSFET

Key Features

  • s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max. ) @ VDS = 30V s Lower RDS(ON) : 0.012Ω (Typ. ) SFP36N03 BVDSS = 30 V RDS(on) = 0.018Ω ID = 36 A TO-220 www. DataSheet4U. com 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous.

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Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 30V s Lower RDS(ON) : 0.012Ω (Typ.) SFP36N03 BVDSS = 30 V RDS(on) = 0.018Ω ID = 36 A TO-220 www.DataSheet4U.com 2 3 1.Gate 2. Drain 3.