Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -250V Low RDS(ON) : 1.65 Ω (Typ.)
1 2 3
BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.7 A
TO-220
1.Gate 2. Drain 3....