SFP9640L Datasheet | Fairchild Semiconductor

FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10u A (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.) BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds ② ① ① ③ ① Value -200 -11 -7.5 -44 ±20 806 -11 9.8 -5.0 98 0.78 - 55 to +150 Units V A A V m J A m J V/ns W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.27 -62.5 ℃/W Units Rev. A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units --0.16 ------5.47 ---2.0 -100 100 -10 -100 0.5 -μA Ω S V V/℃ V n A N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250μA ID=-250μA VGS=-20V VGS=20V VDS=-200V VDS=-160V,TC=125℃ VGS=-5V,ID=-5.5A VDS=-40V,ID=-5.5A ④ ④ Drain-Source Breakdown Voltage -200 Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge --1.0 -----------------...