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Advanced Power MOSFET
FEATURES
❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)
SFP9640L
BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A
TO-220
1 2 3
1.Gate 2. Drain 3.