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SGH15N120RUFD - IGBT

General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness.

Key Features

  • Short circuit rated 10µs @ TC = 100°C, VGE = 15V.
  • High speed switching.
  • Low saturation voltage : VCE(sat) = 2.3 V @ IC = 15A.
  • High input impedance.
  • CO-PAK, IGBT with FRD : trr = 70ns (typ. ).

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Other Datasheets by Fairchild (now onsemi)

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SGH15N120RUF IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGH15N120RUFD SGH15N120RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • Short circuit rated 10µs @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.3 V @ IC = 15A • High input impedance • CO-PAK, IGBT with FRD : trr = 70ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls.