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SGL5N150UF - IGBT

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

SGL5N150UF is designed for the Switching Power Supply applications.

Overview

SGL5N150UF SGL5N150UF IGBT General.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A.
  • High Input Impedance.