SGL5N150UF Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications.
SGL5N150UF Key Features
- High Speed Switching
- Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
- High Input Impedance
- High Input Voltage Off-line Converter