SGU20N40L - High input impedance

Datasheet Summary

Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure.

They also have wide noise immunity.

Features

High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L.

Fairchild Semiconductor

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Datasheet Details

Part number	SGU20N40L
Manufacturer	Fairchild Semiconductor
File Size	149.24 KB
Description	High input impedance
Datasheet	SGU20N40L Datasheet
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SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications Features • • • • • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L Application Strobe flash.

Published: Dec 14, 2005 |