SS9018 Datasheet | Fairchild Semiconductor

AM/FM Amplifier, Local Oscillator of FM/VHF Tuner - High Current Gain Bandwidth Product f T=1.1 GHz (Typ) TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 15 5 50 400 150 -55 ~ 150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO h FE VCE (sat) Cob f T Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition IC =100µA, IE =0 IC =1.0m A, IB =0 IE =100µA, IC =0 VCB =12V, IE =0 VCE =5V, IC =1.0m A IC =10m A, IB =1m A VCB =10V, IE =0 f=1MHz VCE =5V, IC =5m A 700 1.3 1100 28 100 Min. 30 15 5 50 198 0.5 1.7 V p F MHz Typ. Max. Units V V V n A h FE Classification Classification h FE D 28 ~ 45 E 39 ~ 60 F 54 ~ 80 G 72 ~ 108 H 97 ~ 146 I 132 ~ 198 ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 Typical Characteristics 10 9 VCE = 5V IB = 90µ A IC[m A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 IB = 70µ A IB = 60µ A IB = 50µ A IB = 40µ A IB = 30µ A IB = 20µ A IB = 10µ A h FE, DC CURRENT GAIN IB = 80µ A 10 9 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[m A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB f = 1MHz IE = 0 V BE(sat) Cob[p F], CAPACITANCE 1 10 V CE(sat) 0.01 0.1 0.1 1 10...