SSD2007A - Dual N-CHANNEL POWER MOSFET

Fairchild (now onsemi)

Key Features

Extremely Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package : 8SOP SSD2007A 8 SOP S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 D1,D2 D1,D2 ▼ G1 ,G2 ▼ ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL Characteristic Drain-to-Source Voltage(1) Drain-.

SSD2007A dual n-channel power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	SSD2007A
Manufacturer	Fairchild (now onsemi)
File Size	233.88 KB
Description	Dual N-CHANNEL POWER MOSFET
Datasheet	SSD2007A Datasheet

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Full PDF Text Transcription (Reference)

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Dual N-CHANNEL POWER MOSFET FEATURES Extremely Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package : 8SOP SSD2007A 8 SOP S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 D1,D2 D1,D2 ▼ G1 ,G2 ▼ ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.0MΩ)(1) Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=100℃ Drain Current-Pulsed (2) Total Power Dissipation TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range Maximum Lead Temp.