SSD2007A Datasheet | Fairchild Semiconductor

FEATURES ‰ Extremely Lower RDS(ON) ‰ Improved Inductive Ruggedness ‰ Fast Switching Times ‰ Rugged Polysilicon Gate Cell Structure ‰ Low Input Capacitance ‰ Extended Safe Operating Area ‰ Improved High Temperature Reliability ‰ Surface Mounding Package : 8SOP 8 SOP S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 D1,D2 D1,D2 ▼ G1 ,G2 ▼ ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM TJ , TSTG Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.0MΩ)(1) Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=100℃ Drain Current-Pulsed (2) Total Power Dissipation TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds Value 50 50 ±20 2.0 1.6 8.0 2.0 1.3 - 55 to +150 Notes ; (1) TJ= 25℃ to 150℃ (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature Units V V V A A V W ℃ Rev. B Dual N-CHANNEL POWER MOSFET Electrical Characteristics (TA=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current(2) Static Drain-Source On-State Resistance(2) Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge Min. Typ. Max....