h S a
t e e
4U
. m o c
SSH6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A
TO-3P
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. )
1 2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Continuous Drain Current (TC=100 C) Drai.
Full PDF Text Transcription for SSH6N70A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SSH6N70A. For precise diagrams, and layout, please refer to the original PDF.
Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged Technology Rugged Gate Oxide Tec...
SSH6N70A Datasheet
