Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V.
- Low gate charge ( typical 6.5 nC).
- Low Crss ( typical 6.5 pF).
- 100% avalanche tested.
- Improved dv/dt capability.
- Gate-Source Voltage ± 50V guaranteed
D
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G SOT-223
SSM Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - C.
SSM1N45B Datasheet
