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SSM1N45B - 450V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V.
  • Low gate charge ( typical 6.5 nC).
  • Low Crss ( typical 6.5 pF).
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Gate-Source Voltage ± 50V guaranteed D S G SOT-223 SSM Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - C.

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SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration. Features • 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 6.