SSN1N45B Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.
SSN1N45B Key Features
- 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche test