SSP2N60A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSP2N60A
Manufacturer	Fairchild Semiconductor
File Size	444.91 KB
Description	Advanced Power MOSFET
Datasheet	SSP2N60A Datasheet
Additional preview pages of the SSP2N60A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ. ) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drai.

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Published: Sep 16, 2006 |