SSP4N60AS - Advanced Power MOFET

Product Overview

Fairchild Semiconductor

Part number	SSP4N60AS
Manufacturer	Fairchild Semiconductor
File Size	253.60 KB
Description	Advanced Power MOFET
Datasheet	SSP4N60AS Datasheet
Additional preview pages of the SSP4N60AS datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Dr.

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Published: Apr 4, 2005 |