SSP4N60AS Datasheet Advanced Power Mofet

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET.

Datasheet Details

Part number	SSP4N60AS
Manufacturer	Fairchild (now onsemi)
File Size	253.60 KB
Description	Advanced Power MOFET
Datasheet	SSP4N60AS_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Dr.

Brand Logo	Part Number	Description	Manufacturer
	SSP4N60AS	Advanced Power MOFET	Samsung Electronics
	SSP4N60	(SSP4N55 / SSP4N60) N-Channel Power MOSFET	Samsung Electronics