Datasheet4U Logo Datasheet4U.com

SSP4N80A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: .. Advanced Power MOSFET.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ. ) 1 2 3 SSP4N80A BVDSS = 800 V RDS(on) = 4.0 Ω ID = 4 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo SSP4N80 (SSP4N70 / SSP4N80) N-Channel Power MOSFETs Samsung Electronics

More Datasheets from Fairchild (now onsemi)

Part Number Description
SSP4N80AS Advanced Power MOSFET
SSP4N60AS Advanced Power MOFET
SSP4N60B 600V N-Channel MOSFET
SSP45N20A advanced power MOSFET
SSP45N20B 200V N-Channel MOSFET
SSP10N60A Advanced Power MOSFET
SSP10N60B 600V N-Channel MOSFET
SSP1N60B N-Channel MOSFET
SSP2N60A Advanced Power MOSFET
SSP2N60B 600V N-Channel MOSFET

SSP4N80A Distributor