SSP70N10A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSP70N10A
Manufacturer	Fairchild Semiconductor
File Size	641.68 KB
Description	Advanced Power MOSFET
Datasheet	SSP70N10A Datasheet
Additional preview pages of the SSP70N10A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ. ) SSP70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 55 38.9 1 O Ο Units V A.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 29, 2005 |