SSS4N60AS - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSS4N60AS
Manufacturer	Fairchild Semiconductor
File Size	359.56 KB
Description	Advanced Power MOSFET
Datasheet	SSS4N60AS Datasheet
Additional preview pages of the SSS4N60AS datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Av.

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Published: Feb 3, 2015 |