h S a
t e e
4U
. m o c
SSS6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A
TO-220F
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. )
1
2
3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Continuous Drain Current (TC=100 C).
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Advanced Power MOSFET
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t a FEATURES
h S a
t e e
4U
.
m o c
SSS6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A
TO-220F
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.
SSS6N70A Datasheet
