Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
DC/DC converter
Power management
Fe
Features
- Q1: N-Channel
6 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V.
- Q2: P-Channel.
- 6 A,.
- 30 V
RDS(on) = 32 mΩ @ VGS =.
- 10V RDS(on) = 45 mΩ @ VGS =.
- 4.5V
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4 3 2 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous - Pulsed
Power Di.
Si4542DY Datasheet
