Si9955DY Datasheet | Fairchild Semiconductor

Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load switch • Motor controls Features • 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' ' 62 - 6 - 6 $EVROXWH 0D[LPXP 5DWLQJV $U Ã2Ã!$- 8ȁyr††Ã‚‡ur…v†rÁ‚‡rq 6PERO 3DUDPHWHU W'66 W- 66 D' Q' 9…hvT‚ˆ…prÃW‚y‡htr Bh‡r T‚ˆ…prÃW‚y‡htr 9…hvÃ8ˆ……r‡ Ã8‚‡vˆ‚ˆ†Ã ÃQˆy†rq Q‚r…Ã9v††v-...