Datasheet4U Logo Datasheet4U.com

Si9955DY - Dual N-Channel MOSFET

Description

These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • • 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' '   62.
  •  6.
  •  6   $.

📥 Download Datasheet

Datasheet preview – Si9955DY

Datasheet Details

Part number Si9955DY
Manufacturer Fairchild Semiconductor
File Size 195.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet Si9955DY Datasheet
Additional preview pages of the Si9955DY datasheet.

📁 Similar Datasheet

  • Si9955DY - Dual N-Channel Enhancement-Mode MOSFET (TEMIC)
  • Si9950DY - Complementary MOSFET Half-Bridge (TEMIC)
  • Si9952DY - Dual Enhancement-Mode MOSFET (TEMIC)
  • SI9953DY - Dual P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)
  • Si9956DY - Dual N-Channel 20-V (D-S) MOSFET (Vishay)
  • SI9956DY - N-channel enhancement mode field-effect transistor (NXP)
  • SI9958DY - Complementary 20-V (D-S) MOSFET (Vishay Siliconix)
  • Si9959DY - Dual N-Channel Enhancement-Mode MOSFET (TEMIC)
  • SI9910 - Adaptive Power MOSFET Driver1 (Vishay Siliconix)
  • SI9912 - Half-Bridge MOSFET Driver for Switching Power Supplies (Vishay Siliconix)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
Si9955DY June 1999 Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load switch • Motor controls Features • 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability.
Published: |