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P-N GaAs
Infrared-Emitting Diode
Optoelectronic Products
4-72
TIL38
General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cost plastic T1-* package.
Output Spectrally Compatible With Silicon Sensors High Power Output High Radiant Intensity
Absolute Maximum Ratings
Maximum Temperature Operating Temperature Storage Temperature Pin Temperature (Soldering, 3 s)
Maximum Power Dissipation
Total Dissipation at TA = 25°C
Derate Linearly at 25°C
125 mW 1.3 mW/oC
Maximum Voltage and Current
VR Reverse Voltage
5V
IF Forward de Current (25°C) 150 mA
Package Outline
H~,J .100
(2.540) -
(5---r--l-~~
~
- I I .190:.010
-1 r- (4.826±O.254)
(
.340
I(8.636) e~.--'--_~
1
.570 MIN
(14.478)
---- -
-'--~_~_O
"""'----*
.015 (.381) X .017 (.432)
t.04O MIN (1.016)
Not.
TIL38 Datasheet
