TIP106 Datasheet | Fairchild Semiconductor

TIP105/TIP106/TIP107 - PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor - Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : h FE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - plementary to TIP100/101/102 Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10k W R2 @ 0.6k W R2 E Absolute Maximum Ratings- Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP105 : TIP106 : TIP107 Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - These ratings are limiting values above which the serviceability of...