Fairchild Semiconductor TIP110
NPN Epitaxial Silicon Darlington Transistor
FEATURES
● Monolithic Construction with Built-in Base-Emitter Shunt Resistors● Complementary to TIP115 / TIP116 / TIP117
● High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum)
● Low Collector-Emitter Saturation Voltage
● Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP110 TIP110TU TIP111TU TIP112 TIP112TU Top Mark TIP110 TIP110 TIP111 TIP112 TIP112 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Rail Bulk Rail
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.