TIP140 Datasheet | Fairchild Semiconductor

TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In Base Emitter Shunt Resistors - High DC Current Gain : h FE = 1000 @ VCE = 4V, IC = 5A (Min.) - Industrial Use - plement to TIP145/146/147 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.Emitter Equivalent Circuit C VCEO Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG R1 R2 E R 1 ≅ 8k Ω R 2 ≅ 0.12 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP140 : TIP141 : TIP142 Collector Cut-off Current : TIP140 : TIP141 : TIP142 ICBO Collector Cut-off Current : TIP140 : TIP141 : TIP142 IEBO h FE VCE(sat) VBE(sat) VBE(on) t D t R t STG t F Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall Time VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 10A IC = 5A, IB = 10m A IC = 10A, IB = 40m A IC = 10A, IB = 40m A VCE = 4V, IC = 10A VCC = 30V, IC = 5A IB1 = 20m A, IB2 = -20m A RL = 6Ω 0.15 0.55 2.5 2.5 1000 500 2 3 3.5 3 V V V V µs µs µs µs Rev. A, February 2000 Test Condition IC = 30m A, IB = 0 Min. 60 80 100 Typ. Max. Units V V V ICEO VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 1 1 1 2 m A m A m A m A m A m A m A ©2000 Fairchild Semiconductor International TIP140/141/142 Typical Characteristics IB = 2000u A IB...