Fairchild Semiconductor TIP29B
NPN Epitaxial Silicon Transistor
FEATURES
● Complementary to TIP30/TIP30A/TIP30B/TIP30C July 2008 1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : TIP29 : TIP29A : TIP29B : TIP29C VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 1 3 0.4 30 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A 1 TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol