Fairchild Semiconductor TIP31B
NPN Epitaxial Silicon Transistor
FEATURES
● Complementary to TIP32/TIP32A/TIP32B/TIP32C July 2008 1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : TIP31 : TIP31A : TIP31B : TIP31C VCEO Collector-Emitter Voltage : TIP31 : TIP31A : TIP31B : TIP31C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 3 5 1 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A 1 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Pa