TIS93 - PNP General Purpose Amplifier

Fairchild Semiconductor

Datasheet Details

Part number	TIS93
Manufacturer	Fairchild Semiconductor
File Size	21.94 KB
Description	PNP General Purpose Amplifier
Datasheet	TIS93 Datasheet
Additional preview pages of the TIS93 datasheet.

📁 Similar Datasheet

TIS90 - Silicon NPN Transistor (Texas Instruments)
TIS90M - Silicon NPN Transistor (Texas Instruments)
TIS92 - Silicon NPN Transistor (Texas Instruments)
TIS92M - Silicon NPN Transistor (Texas Instruments)
TIS97 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS (Micro Electronics)
TIS98 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS (Micro Electronics)
TIS0402SD - Non-Shielded SMD Power Inductor (TAITRON)
TIS4D28QES - SMD Shielded Wire Wound Power Inductor (TAITRON)
TIS58 - N-Channel Transistor (Texas Instruments)
TIS59 - N-Channel Transistor (Texas Instruments)

Other Datasheets by Fairchild Semiconductor

TIS97 - NPN General Purpose Amplifier
TIS98 - NPN General Purpose Amplifier
TIS73 - N-Channel Amplifier
TIS74 - N-Channel General Purpose Amplifier

Full PDF Text Transcription

Click to expand full text

TIS93 Discrete POWER & Signal Technologies TIS93 E BC TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.

Published: Apr 16, 2005 |