TN6725A Overview
TN6725A Discrete Power & Signal Technologies TN6725A CB E TO-226 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. See MPSA14 for characteristics. Ratings Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted...