U1898 Datasheet | Fairchild Semiconductor

N-Channel Switch - This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. - Sourced from Process 51. - See J111 for characteristics. TO-92 1. Drain 2. Source 3. Gate Absolute Maximum Ratings- Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 40 -40 50 -55 ~ 150 Units V V m A °C - This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)GS VGS(off) IDGO IDSS r DS(on) Small Signal Characteristics rds(on) Ciss Crss ton toff Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = VGS = 0, f= 1.0 k Hz VDS = 20, VGS = 0, f = 1.0 MHz VGS = - 20 V, f = 1.0 MHz ID(on) = 6.0 m A VGS(off) = 6.0 V 50 16 5.0 35 60 Ω p F p F ns ns Parameter Test Condition IG = 1.0 µA, VDS = 0 VDS = 20 V, ID = 1.0 n A VDG = 20 V, IS = 0 VDS = 20 V, VGS = 0 ID = 1.0 m A, VGS = 0 15 50 Min. -40 -2.0 -7.0 -200 Max. Units V V p A m A Ω Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain-Gate Leakage Current Zero-Gate Voltage Drain Current - On Characteristics Switching Characteristics - Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 125 357 Units m W m W/°C °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 Package Dimensions TO-92 -...