U9014 - Advanced Power MOSFET

Datasheet Summary

Features

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V n Lower RDS(ON) : 0.362 Ω (Typ. ) SFR/U9014 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Curre.

Fairchild Semiconductor

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Datasheet Details

Part number	U9014
Manufacturer	Fairchild Semiconductor
File Size	228.74 KB
Description	Advanced Power MOSFET
Datasheet	U9014 Datasheet
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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Lower RDS(ON) : 0.362 Ω (Typ.) SFR/U9014 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -60 -5.3 -3.

Published: Apr 16, 2005 |