U9120
FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.)
SFR/U9120
BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.9 A
D-PAK
2 1 3 1
I-PAK
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C)
- o o
Value -100 -4.9 -3.4
1 O
Units V A A V m J A m J V/ns W W W/ C o
-20 ±30 144 -4.9 3.2 -6.5 2.5 32 0.26
- 55 to +150
O 1 O 1 O 3 O
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,...
