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U9224 - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = -250V Lower RDS(ON) : 1.65 Ω (Typ. ) 1 SFR/U9224 BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.5 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C).

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Full PDF Text Transcription for U9224 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for U9224. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Le...

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Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 Ω (Typ.) 1 SFR/U9224 BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.5 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -250 -2.5

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