Download U9224 Datasheet PDF
Fairchild Semiconductor
U9224
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 Ω (Typ.) SFR/U9224 BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.5 A D-PAK 2 1 3 I-PAK 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) - o o Value -250 -2.5 -1.5 1 O Units V A A V m J A m J V/ns W W W/ C o -10 + _ 30 156 -2.5 3.0 -4.8 2.5 30 0.24 - 55 to +150 O 1 O 1 O 3 O Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from...