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USB10H - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Datasheet Summary

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V.
  • Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Datasheet Details

Part number USB10H
Manufacturer Fairchild Semiconductor
File Size 241.25 KB
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet download datasheet USB10H Datasheet
Additional preview pages of the USB10H datasheet.

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Full PDF Text Transcription

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USB10H February 1999 USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V • • • • Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
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