USB10H Datasheet Dual P-Channel 2.5V Specified PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: USB10H February 1999 USB10H Dual P-Channel 2.5V Specified PowerTrench.

USB10H dual p-channel 2.5v specified powertrench mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	USB10H
Manufacturer	Fairchild (now onsemi)
File Size	241.25 KB
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
Download	USB10H Download (PDF)

General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V.
Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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