Datasheet4U Logo Datasheet4U.com

USB10P Datasheet P-Channel 2.5V Specified PowerTrenchTM MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: June 1999 USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET General.

General Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Key Features

  • -4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 2 G D D pin 1 TM 5 3 4 SuperSOT -6 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID PD Drai.