Fairchild Semiconductor Y2010DN
Schottky Barrier Rectifier
| Part No. | Y2010DN |
|---|---|
| Datasheet | Y2010DN Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
● Low forward voltage drop● High frequency properties and switching speed
● Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol Parameter RθJC Maximum Thermal Resistance, Junction to Case (per diode)ELECTRICAL CHARACTERISTICS
(per diode) Symbol Parameter VFM * Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A IRM * Maximum Instantaneous Reverse Current @ rated VR * Pulse Test: Pulse Width=300μs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 100 100 20 150 -65 to +150 Value 1.7 Value 0.77 0.65 0.75 0.1 20 Units V V A A °C Units °C/W Units V mA © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev.
