Download IRFS340A Datasheet PDF
Fairchild Semiconductor
IRFS340A
FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Lower Leakage Current: 10µA (Max.) @ VDS = 400V - Lower RDS(ON): 0.437Ω (Typ.) BVDSS = 400 V RDS(on) = 0.55Ω ID = 8 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 400 8 5.1 44 ±30 549 8 8.5 4.0 85 0.68 - 55 to +150 Units V A A V m J A m J V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA...