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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Ο
IRFS550A
BVDSS = 100 V RDS(on) = 0.04 Ω ID = 21 A
TO-220F
Lower RDS(ON) : 0.032 Ω (Typ.)
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 21 14.
IRFS550A Datasheet
