IRFS750A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 Ω (Typ.)
BVDSS = 400 V RDS(on) = 0.3 Ω ID = 8.4 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο Ο Ο
Value 400 8.4 5.3
1 O
Units V A A V m J A m J V/ns W W/ C
Ο
60 + _ 30 1210 8.4 4.9 4.0 49 0.39
- 55 to +150
O 1 O 1 O 3 O
Ο
Thermal...
