Datasheet4U Logo Datasheet4U.com

IRFS840B Datasheet 500v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRF840B/IRFS840B February 2005 IRF840B/IRFS840B 500V N-Channel MOSFET.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Key Features

  • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.
  • Low gate charge ( typical 41 nC).
  • Low Crss ( typical 35 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GD S TO-220 IRF Series GD S TO-220F IRFS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
LZG Logo IRFS840 N-Channel MOSFET LZG
Samsung Logo IRFS840 N-Channel Power MOSFET Samsung
Inchange Semiconductor Logo IRFS840A N-Channel MOSFET Transistor Inchange Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
IRFS840A Advanced Power MOSFET
IRFS820B 500V N-Channel MOSFET
IRFS830B 500V N-Channel MOSFET
IRFS140A Advanced Power MOSFET
IRFS150A Advanced Power MOSFET
IRFS240B 200V N-Channel MOSFET
IRFS244B 250V N-Channel MOSFET
IRFS250B 200V N-Channel MOSFET
IRFS254B 250V N-Channel MOSFET
IRFS340A Advanced Power MOSFET

IRFS840B Distributor