IRFS9630
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.581 Ω (Typ.)
1 2 3
SFS9630
BVDSS = -200 V RDS(on) = 0.8 Ω ID = -4.4 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds o o o
Value -200 -4.4 -3.3
1 O
Units V A A V m J A m J V/ns W W/ C o
-18 + _ 30 258 -4.4 3.3 -5.0 33 0.26
- 55 to +150
O 1 O 1 O 3 O
2 o
Thermal...
