IRFU410B Datasheet 500v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel.

Datasheet Details

Part number	IRFU410B
Manufacturer	Fairchild (now onsemi)
File Size	626.66 KB
Description	500V N-Channel MOSFET
Datasheet	IRFU410B_Fairchild.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Key Features

0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

IRFU410B Distributor

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