IRFU410B - 500V N-Channel MOSFET

Product Overview

Fairchild

Part number	IRFU410B
Manufacturer	Fairchild
File Size	626.66 KB
Description	500V N-Channel MOSFET
Datasheet	IRFU410B Datasheet
Additional preview pages of the IRFU410B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

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Published: Apr 30, 2005 |