IRL510A Datasheet | Fairchild Semiconductor

FEATURES - Logic-Level Gate Drive - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Lower Leakage Current: 10µA (Max.) @ VDS = 100V - Lower RDS(ON): 0.336Ω (Typ.) BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175 Units V A A V m J A m J V/ns W °C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 4.1 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 100 -1.0 -----------------0.1 ------3.2 180 50 20 8 10 17 8 5.5 0.9 3.5 --2.0 100 -100 10 100 0.44 -235 65 25 25 30 45 25 8 --n C ns p F V V n A 1&+$11(/ 32:(5 026)(7 Test...