MJE802 - NPN Epitaxial Silicon Darlington Transistor

Fairchild

Datasheet Details

Part number	MJE802
Manufacturer	Fairchild
File Size	51.87 KB
Description	NPN Epitaxial Silicon Darlington Transistor
Datasheet	MJE802 Datasheet
Additional preview pages of the MJE802 datasheet.

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MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.

Published: May 7, 2005 |