MJE802
MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in Base Emitter Resistors
- High DC Current Gain : h FE= 750 (Min.) @ IC= 1.5 and 2.0A DC
- plement to MJE700/701/702/703
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150
- 55 ~ 150 Units V V V V V A A W °C °C
R1 R2 E B Equivalent Circuit C
R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC = 50m A, IB = 0...
