The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MMBF4416 — N-Channel RF Amplifiers
April 2009
MMBF4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers. • Sourced from process 50.
G
S
SOT-23 D Mark: 6A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDG VGS IGF TJ, TSTG
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction and Storage Temperature Range
Value
30 -30 10 -55 to +150
Units
V V mA °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1μA
IGSS
Gate Reverse Current
VGS = -20V, VDS = 0 VGS = -20V, VDS = 0, TA = 150°C
VGS(off) VGS
Gate Source Cut-off Voltage Gate Source Voltage
VDS = 15V, ID = 1nA VDS = 15V, ID = 0.
MMBF4416 Datasheet
