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MMBF4416A
MMBF4416A
N-Channel RF Amplifier
• This device is designed for RF amplifiers. • Sourced from process 50.
G
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SOT-23 Mark: 6BG
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 35 -35 10 - 55 ~ 150 Units V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBF4416A Datasheet
