Click to expand full text
TN3725A / MMPQ3725
Discrete POWER & Signal Technologies
TN3725A
MMPQ3725
E B E B E B
E
B
C
TO-226
BE
SOIC-16
C
C
C
C
C
C
C
C
NPN Switching Transistor
This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 60 6.0 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
MMPQ3725 Datasheet
