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ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
September 2002
PWM Optimized
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.2mΩ
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.0026Ω (Typ), VGS = 10V • rDS(ON) = 0.004Ω (Typ), VGS = 4.