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NDF0610 - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

Key Features

  • -0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for both through hole and surface mount.

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Full PDF Text Transcription (Reference)

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April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features -0.18 and -0.12A, -60V.