NDF0610 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A.
NDF0610 Key Features
- 0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low R
NDF0610 Applications
- 0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for bot