NDH8320C
Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Channel 3 A, 20 V, RDS(ON)=0.06 Ω @ VGS=4.5 V RDS(ON)=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON)=0.13 Ω @ VGS=-4.5 V RDS(ON)=0.19 Ω @ VGS=-2.7 V. Proprietary Super SOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current...
