NDP7051L Datasheet N-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect.

NDP7051L n-channel logic level enhancement mode field effect transistor by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	NDP7051L
Manufacturer	Fairchild (now onsemi)
File Size	360.04 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Download	NDP7051L Download (PDF)

General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

67 A, 50 V. RDS(ON) = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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