Datasheet4U Logo Datasheet4U.com

NDS8928 - Dual N&P-Channel MOSFET

Description

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V RDS(ON)=0.045Ω @ VGS=2.7V P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V RDS(ON)=0.1Ω @ VGS=-2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Dra.

📥 Download Datasheet

Datasheet preview – NDS8928

Datasheet Details

Part number NDS8928
Manufacturer Fairchild
File Size 354.56 KB
Description Dual N&P-Channel MOSFET
Datasheet download datasheet NDS8928 Datasheet
Additional preview pages of the NDS8928 datasheet.

📁 Similar Datasheet

  • NDS8434 - Single P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZB-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZD-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZE-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS0610 - P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDS331N - N-Channel MOSFET (VBsemi)
  • NDS351AN - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V RDS(ON)=0.045Ω @ VGS=2.7V P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V RDS(ON)=0.1Ω @ VGS=-2.7V.
Published: |